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| STM4880 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 9.6A RDS(ON) (m) Max 17 @ VGS=10V 26 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a TA=25C TA=70C Limit 30 20 9.6 7.7 40 20 Units V V A A A mJ W W C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a TA=25C TA=70C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 C/W Details are subject to change without notice. Jun,26,2008 1 www.samhop.com.tw STM4880 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS= 20V , VDS=0V 1 10 uA uA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=9.6A VGS=4.5V , ID=7.8A VDS=10V , ID=9.6A 1.0 1.8 13 19 15 3 17 26 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 655 176 107 13 15 15 29 10.3 5.3 1.5 2.8 1.7 0.78 1.2 VDD=15V ID=9.6A VGS=10V RGEN=6 ohm VDS=15V,ID=9.6A,VGS=10V VDS=15V,ID=9.6A,VGS=4.5V VDS=15V,ID=9.6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=2A A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,RG=25,VDD=20V.(See Figure13) Jun,26,2008 2 www.samhop.com.tw STM4880 Ver 1.0 30 VGS=10V VGS=4V 15 ID, Drain Current(A) ID, Drain Current(A) 24 12 Tj=125 C 9 18 VGS=4.5V VGS=3.5V 12 6 25 C -55 C 6 VGS=3V 3 0 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 30 25 Figure 2. Transfer Characteristics 1.6 1.5 RDS(on), On-Resistance Normalized RDS(on)(m ) 20 15 10 5 1 1 6 V G S =4.5V 1.4 1.3 1.2 1.1 1.0 0.8 V G S =10V ID=9.6 A V G S =10V V G S =4.5V ID=7.8 A 12 18 24 30 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S ID=250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 3 Figure 6. Breakdown Voltage Variation with Temperature Jun,26,2008 www.samhop.com.tw STM4880 Ver 1.0 36 30 20.0 Is, Source-drain current(A) ID=9.6A 10.0 25 C 125 C RDS(on)(m ) 24 18 75 C 12 6 0 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 900 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 750 C, Capacitance(pF) Ciss 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 30 8 6 4 2 0 0 V DS =15V ID=9. 6A 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 Tr 100 N) L im it 10 ID, Drain Current(A) Switching Time(ns) 100 60 10 T D(on) T D(off) Tf 10 R (O DS 0u s 1m 10 1s DC s ms 1 V G S =10V S ingle P uls e T A=25 C 1 1 V DS =15V ,ID=9.6A V G S =10V 0.1 6 10 60 100 300 600 0.05 0.1 1 10 30 70 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,26,2008 4 www.samhop.com.tw STM4880 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 Single Pulse 1. 2. 3. 4. t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,26,2008 5 www.samhop.com.tw STM4880 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Jun,26,2008 6 www.samhop.com.tw STM4880 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Jun,26,2008 7 www.samhop.com.tw |
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